GaAgTe₂ is a ternary chalcogenide semiconductor compound combining gallium, silver, and tellurium elements. This material belongs to the family of I-III-VI semiconductors and is primarily of research interest rather than established commercial production, with potential applications in optoelectronic and thermoelectric device development. The silver-containing chalcogenide system offers tunable electronic properties for specialized semiconductor applications where alternative binary or simpler ternary systems may be inadequate.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.28 | GPa | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 15.23 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.757 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.100 | eV | — | ||
| ↳ | 0.1050 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 56.74 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.02129 | C/m² | — | ||
| ↳ | 0.9505 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -49.12 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000100 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2390 | eV/atom | — |