GaAgSe is a ternary compound combining gallium, silver, and selenium elements, belonging to the chalcogenide semiconductor family. This material is primarily of research interest for optoelectronic and photonic applications, particularly in infrared detection and nonlinear optical devices where its wide bandgap and phase-matching properties may offer advantages. Engineers would evaluate this compound for specialized photonic systems requiring mid-infrared transparency or frequency conversion, though it remains an experimental material with limited industrial maturity compared to established alternatives like GaAs or InP.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | -3.880 | GPa | — | ||
Poisson's Ratio(ν) | 0.1200 | - | — | ||
Shear Modulus(G) | -3.490 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.132 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.546 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.158 | eV/atom | — |