GaAgSe2 — Properties & Data | MatWorld

GaAgSe2

metal

· GaAgSe2

GaAgSe2 is a ternary compound semiconductor composed of gallium, silver, and selenium, belonging to the chalcopyrite crystal family. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, particularly where tunable bandgap and mixed-metal chemistry offer advantages over binary semiconductors. Its silver-containing composition makes it relevant to studies of advanced solar cells, infrared detectors, and nonlinear optical devices, though commercial adoption remains limited compared to more established semiconductor systems.

photovoltaic researchinfrared detectorsnonlinear optical deviceswide-bandgap semiconductorsthin-film solar cellsoptoelectronic materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	7,716	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3600	-	DFT · OptB88vdW
Shear Modulus(G)	2,488.8	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1970	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.2100	eV	DFT · OptB88vdW
↳	1.560	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	33.87 range 32.05–35.69median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	13.26	-	DFT · OptB88vdW
↳	6.326	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.01000	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.01667	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.05757	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000153	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00199	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-33.00	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	255.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	31.49	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01660	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4062	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAgSe2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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