GaAgSe2 is a ternary compound semiconductor composed of gallium, silver, and selenium, belonging to the chalcopyrite crystal family. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, particularly where tunable bandgap and mixed-metal chemistry offer advantages over binary semiconductors. Its silver-containing composition makes it relevant to studies of advanced solar cells, infrared detectors, and nonlinear optical devices, though commercial adoption remains limited compared to more established semiconductor systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,716 | ksi | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 2,488.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1970 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3915 range 0.000–0.7830median of 2 measurements | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 33.87 range 32.05–35.69median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.05757 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01660 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4062 | eV/atom | — |