GaAgS is a ternary compound semiconductor composed of gallium, silver, and sulfur, belonging to the family of chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and photonic applications, where its direct bandgap and lattice properties make it relevant for infrared detection, nonlinear optical devices, and potential photovoltaic systems. While not yet widely commercialized, GaAgS and related silver-containing chalcogenides are investigated as alternatives to more conventional III-V semiconductors and II-VI materials, offering tunable optical properties and potential advantages in niche high-performance applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,338.1 | ksi | — | ||
Shear Modulus(G) | 1,827.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1823 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6213 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1500 | eV/atom | — |