GaAgP₂Se₆ is a quaternary semiconducting compound combining gallium, silver, phosphorus, and selenium elements, belonging to the class of mixed-metal chalcogenides. This material is primarily of research interest rather than established industrial production, studied for its potential in layered crystal structures and optoelectronic applications where the combination of metallic and chalcogenide components offers tunable electronic and optical properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,971.9 | ksi | — | ||
Exfoliation Energy(Eexf) | 74.45 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 2,522.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1777 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3620 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 22.55 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -75.02 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00340 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1837 | eV/atom | — |