GaAgO2 is a ternary oxide semiconductor compound combining gallium, silver, and oxygen elements. This material remains largely in the research phase, with potential applications in optoelectronic devices, photocatalysis, and solid-state electronics where the combined properties of gallium oxides and silver compounds might offer advantages in light emission, charge transport, or catalytic activity. Engineers would consider this compound in specialized semiconductor research contexts where conventional binary oxides (such as Ga2O3 or Ag2O) prove insufficient, though maturity and reproducibility remain open questions compared to established semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,934.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 9,404.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2551 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.200 | eV | — | ||
| ↳ | 0.7880 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 11.44 | - | — | ||
| ↳ | 12.23 | - | — | ||
| ↳ | 8.909 range 6.326–11.49median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -81.26 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01560 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.381 | eV/atom | — |