GaAgN3 — Properties & Data | MatWorld

GaAgN3

metal

· GaAgN3

GaAgN3 is a ternary compound combining gallium, silver, and nitrogen elements, belonging to the family of metal nitrides and mixed-metal compounds. This is a research-phase material with potential applications in semiconductor, photonic, or high-temperature materials research, though industrial adoption remains limited. The gallium-silver-nitrogen system is primarily of academic interest for exploring novel crystal structures, electronic properties, or catalytic behaviors not readily available in conventional binary nitrides.

experimental semiconductor researchphotonic materials developmenthigh-temperature compound studiescatalytic material explorationthin-film deposition research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.000338	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.840	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAgN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control