GaAgGeS4

semiconductor

· GaAgGeS4

GaAgGeS₄ is a quaternary semiconductor compound combining gallium, silver, germanium, and sulfur into a chalcogenide crystal structure. This is a research-phase material rather than an established commercial compound, investigated primarily for its potential in infrared optics and photonic applications due to the wide bandgap and transmission properties characteristic of sulfide-based semiconductors. The silver content and mixed-group composition make it of particular interest for nonlinear optical devices and infrared sensing applications where conventional materials have limitations.

infrared optics researchnonlinear optical devicesinfrared detectorsphotonic integrated circuitsspecialized semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1412	lb/in³	—

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Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.000	eV	—
↳	1.315	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01290	eV/atom	—
Formation Energy(ΔHf)	-0.4567	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAgGeS4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control