GaAgGeS₄ is a quaternary semiconductor compound combining gallium, silver, germanium, and sulfur into a chalcogenide crystal structure. This is a research-phase material rather than an established commercial compound, investigated primarily for its potential in infrared optics and photonic applications due to the wide bandgap and transmission properties characteristic of sulfide-based semiconductors. The silver content and mixed-group composition make it of particular interest for nonlinear optical devices and infrared sensing applications where conventional materials have limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1412 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.315 | eV | DFT · OptB88vdW | ||
| ↳ | 3.000 | eV | Measured | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01290 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4567 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data