GaAg3S2 is a ternary compound semiconductor composed of gallium, silver, and sulfur, belonging to the family of chalcogenide materials with potential applications in optoelectronic and photovoltaic devices. This material is primarily of research interest rather than established in high-volume industrial production, investigated for its semiconducting properties and potential use in infrared detection, photovoltaic energy conversion, and other emerging optoelectronic applications where its band gap characteristics and light-absorption properties may offer advantages over conventional semiconductors. Engineers considering this material should recognize it as an experimental compound suited to specialized research and development contexts rather than mature commercial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1851 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01300 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 11.35 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3257 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.04278 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data