GaAg3S2

metal

· JVASP-114655· GaAg3S2

GaAg3S2 is a ternary compound semiconductor composed of gallium, silver, and sulfur, belonging to the family of chalcogenide materials with potential applications in optoelectronic and photovoltaic devices. This material is primarily of research interest rather than established in high-volume industrial production, investigated for its semiconducting properties and potential use in infrared detection, photovoltaic energy conversion, and other emerging optoelectronic applications where its band gap characteristics and light-absorption properties may offer advantages over conventional semiconductors. Engineers considering this material should recognize it as an experimental compound suited to specialized research and development contexts rather than mature commercial applications.

infrared detectorsphotovoltaic researchoptoelectronic devicessemiconductor researchchalcogenide applicationsadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.124	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01300	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.3257	eV/atom	—
Formation Energy(ΔHf)	-0.04278	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAg3S2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control