GaAcO3 — Properties & Data | MatWorld

GaAcO3

semiconductor

· GaAcO3

GaAcO3 is a gallium-based oxide semiconductor compound, likely in early research or experimental stages given limited commercial documentation. This material belongs to the gallium oxide family, which has attracted significant academic and industrial interest for high-voltage power electronics, UV detection, and wide-bandgap semiconductor applications where conventional silicon reaches its limits.

Wide-bandgap power electronicsHigh-voltage switching devicesUV photodetectorsPower conversion systemsResearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.996	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.856	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAcO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control