GaAcO3 is a gallium-based oxide semiconductor compound, likely in early research or experimental stages given limited commercial documentation. This material belongs to the gallium oxide family, which has attracted significant academic and industrial interest for high-voltage power electronics, UV detection, and wide-bandgap semiconductor applications where conventional silicon reaches its limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.996 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.856 | eV/atom | — |