Ga₈Bi₄Se₁₆ is a quaternary semiconductor compound combining gallium, bismuth, and selenium—a member of the III-V and V-VI hybrid semiconductor family. This material is primarily of research interest for its potential in thermoelectric and narrow-bandgap optoelectronic applications, where the bismuth and selenium components can enable tunable electronic properties and phonon scattering for improved energy conversion or infrared detection.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.994 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5310 | eV/atom | — |