Ga6 Te2

semiconductor

· Ga6 Te2

Ga₆Te₂ is a III-VI compound semiconductor formed from gallium and tellurium, belonging to the family of narrow-bandgap semiconductors used in infrared and optoelectronic applications. This material is primarily investigated in research contexts for thermal imaging, infrared detectors, and photovoltaic devices where its tellurium content provides sensitivity in the infrared spectrum. While less commercialized than mainstream semiconductors like GaAs or InSb, Ga₆Te₂ represents an alternative composition within gallium telluride systems, offering potential advantages in cost or thermal performance for specialized infrared sensing applications.

infrared detectorsthermal imaging sensorsinfrared photovoltaicsresearch optoelectronicsnarrow-bandgap semiconductorsspace-based sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00440	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.00700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga6 Te2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control