Ga4SiO8 is a gallium silicate ceramic compound that combines gallium oxide with silica in a defined stoichiometric ratio. This material belongs to the family of wide-bandgap semiconducting ceramics and is primarily of research and specialized industrial interest rather than a commodity engineering ceramic. Its applications leverage gallium's unique electronic and thermal properties in environments requiring high-temperature stability, radiation resistance, or specific optical/electrical functionality, making it relevant for advanced ceramics development rather than conventional load-bearing structural applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1859 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.648 | eV | DFT · OptB88vdW | ||
| ↳ | 4.346 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 3.761 | - | DFT · OptB88vdW | ||
| ↳ | 2.886 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000601 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000581 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -88.47 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 355.3 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06300 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -2.146 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data