Ga4PbS7

semiconductor

· Ga4PbS7

Ga₄PbS₇ is a quaternary semiconductor compound combining gallium, lead, and sulfur elements, belonging to the family of lead-chalcogenide semiconductors with potential for infrared and photovoltaic applications. This material is primarily of research interest rather than established in high-volume production; it is investigated for its tunable bandgap and potential use in infrared detection, thermal imaging systems, and solar energy conversion where lead-chalcogenide semiconductors traditionally excel. The combination of gallium with lead sulfide offers opportunities to engineer optical and electronic properties beyond simple binary or ternary compounds, though industrial adoption remains limited compared to more mature alternatives like PbTe or HgCdTe.

infrared detectorsthermal imaging sensorsphotovoltaic researchoptoelectronic devicesnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.080	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4PbS7

Electrical Properties

Regulatory Screening

Environmental

Export Control