Ga4Bi3As

ceramic

· JVASP-104743· Ga4Bi3As

Ga₄Bi₃As is a ternary semiconductor ceramic compound belonging to the III-V semiconductor family, combining gallium, bismuth, and arsenic elements. This is a research-phase material primarily of interest for advanced optoelectronic and thermoelectric applications where bismuth doping of gallium arsenide lattices can alter band structure and carrier properties. The material remains largely experimental; engineers would consider it for next-generation infrared detectors, mid-infrared emitters, or high-ZT thermoelectric devices where bismuth incorporation offers potential advantages in bandgap engineering and phonon scattering compared to conventional GaAs.

infrared optoelectronicsthermoelectric devicesbandgap engineeringsemiconductor researchmid-IR detectorsadvanced electronics R&D

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2381	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.05020	eV/atom	—
Formation Energy(ΔHf)	-0.03349	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4Bi3As

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental