Ga4Bi3As
ceramic· JVASP-104743· Ga4Bi3As
Ga₄Bi₃As is a ternary semiconductor ceramic compound belonging to the III-V semiconductor family, combining gallium, bismuth, and arsenic elements. This is a research-phase material primarily of interest for advanced optoelectronic and thermoelectric applications where bismuth doping of gallium arsenide lattices can alter band structure and carrier properties. The material remains largely experimental; engineers would consider it for next-generation infrared detectors, mid-infrared emitters, or high-ZT thermoelectric devices where bismuth incorporation offers potential advantages in bandgap engineering and phonon scattering compared to conventional GaAs.
infrared optoelectronicsthermoelectric devicesbandgap engineeringsemiconductor researchmid-IR detectorsadvanced electronics R&D
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.