Ga4 is a gallium-based semiconductor compound, likely a gallium arsenide (GaAs) variant or related III-V semiconductor material used in optoelectronic and high-frequency applications. This material family is valued for direct bandgap properties and high electron mobility, making it suitable for converting electrical signals to light and vice versa, as well as for operating at microwave and millimeter-wave frequencies where silicon reaches its limits. Compared to silicon, gallium-based semiconductors offer superior performance in radiation-resistant environments and integrated photonic systems, though at higher cost and with more specialized processing requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,802.3 | ksi | — | ||
Shear Modulus(G) | 4,200.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00230 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.000 | eV/atom | — |