Ga₄Te₄ is a III-VI compound semiconductor composed of gallium and tellurium, belonging to the family of chalcogenide semiconductors. This material is primarily of research and development interest for optoelectronic and photonic applications, where its direct bandgap and optical properties make it potentially valuable for infrared detectors, thermal imaging systems, and light-emitting devices. Compared to more mature alternatives like GaAs or InSb, Ga₄Te₄ remains largely experimental but represents an important composition within the gallium telluride material family for engineers exploring next-generation infrared and high-frequency electronic components.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.36 | GPa | — | ||
Shear Modulus(G) | 16.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2169 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3430 | eV/atom | — |