Ga4 Te2 O12

semiconductor

· Ga4 Te2 O12

Ga₄Te₂O₁₂ is an oxide semiconductor compound combining gallium, tellurium, and oxygen, belonging to the family of mixed metal oxides with potential optoelectronic properties. This is primarily a research-phase material explored for photonic and sensing applications where the combination of gallium and tellurium oxides may offer tunable band gaps or nonlinear optical behavior, though it remains less commercialized than simpler binary alternatives like GaAs or GaP. Engineers would consider this compound in advanced semiconductor research contexts where the structural and electronic properties of ternary oxide systems could enable novel device functions in niche applications.

experimental optoelectronicsphotonic research devicesoptical sensorswide-bandgap semiconductorsmaterials research and characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	28,382.3	ksi	—
Shear Modulus(G)	15,851.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9581	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.601	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4 Te2 O12

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control