Ga₄Se₆ is a compound semiconductor belonging to the gallium chalcogenide family, formed from gallium and selenium elements. This material is primarily of research and developmental interest for optoelectronic and photonic applications, where its band gap and optical properties make it candidate for infrared detectors, nonlinear optical devices, and potential photovoltaic systems. As a less-studied member of the III-VI semiconductor class, Ga₄Se₆ offers designers an alternative material platform where layered crystal structures and tunable electronic properties may enable novel device architectures in the infrared and visible spectrum regions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,087.6 | ksi | — | ||
Shear Modulus(G) | 3,473.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9932 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5830 | eV/atom | — |