Ga₄Se₄Te₂ is a quaternary chalcogenide semiconductor compound combining gallium with selenium and tellurium. This material belongs to the family of mixed chalcogenide semiconductors, which are primarily of research interest for optoelectronic and photonic applications due to their tunable bandgap and infrared transmission properties. The incorporation of both selenium and tellurium allows for composition-dependent engineering of electronic and optical characteristics, making it a candidate material for infrared detectors, nonlinear optical devices, and specialized optical windows where conventional semiconductors are unsuitable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,624.3 | ksi | — | ||
Shear Modulus(G) | 2,505.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.633 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4900 | eV/atom | — |