Ga₄S₄ is a gallium sulfide semiconductor compound belonging to the III-VI family of materials, characterized by its layered crystal structure and direct bandgap properties. This material is primarily explored in research contexts for optoelectronic and photonic device applications, where its semiconducting properties and potential for wide bandgap engineering make it a candidate for UV-visible light emission and detection. Compared to more established III-V semiconductors (like GaAs), gallium sulfides offer different lattice parameters and band structure characteristics, positioning them as an alternative platform for niche photonic applications, though industrial adoption remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,869.2 | ksi | — | ||
Shear Modulus(G) | 3,710.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.418 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7070 | eV/atom | — |