Ga4 P4 S16

semiconductor

· Ga4 P4 S16

Ga₄P₄S₁₆ is a mixed-anion III-V semiconductor compound combining gallium phosphide and gallium sulfide phases, representing an emerging narrow-gap or intermediate bandgap material in the gallium chalcogenide family. This compound is primarily investigated in research settings for optoelectronic and photovoltaic applications where tunable bandgap and mixed anion engineering could enable wavelength-selective detection or multi-junction device architectures. The material's mixed phosphorus-sulfur composition positions it as a potential platform for exploring bandgap engineering between traditional GaP (wider gap) and GaS (narrower gap) semiconductors, though commercial deployment remains limited and material synthesis and reproducibility are active research areas.

optoelectronic researchwide-spectrum photovoltaicsbandgap engineeringinfrared detectorssemiconductor thin filmscompound semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.082	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4410	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4 P4 S16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control