Ga₄Os₂ is an intermetallic semiconductor compound combining gallium and osmium, representing an exploratory material in the transition metal-compound semiconductor family. This compound is primarily of research interest rather than established industrial production, with potential applications in high-temperature electronics and specialized semiconductor devices where the unique electronic properties of osmium-containing phases could provide advantages over conventional III-V semiconductors. The material's development reflects ongoing efforts to discover semiconductors with enhanced thermal stability or novel electronic characteristics for next-generation device architectures.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 182.3 | GPa | — | ||
Shear Modulus(G) | 92.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6661 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1330 | eV/atom | — |