Ga₄I₁₂ is a compound semiconductor composed of gallium and iodine, representing a member of the III-V halide semiconductor family. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in optoelectronic devices and radiation detection where its wide bandgap and ionic character could offer advantages in specific niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,379.5 | ksi | — | ||
Shear Modulus(G) | 946.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.971 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4580 | eV/atom | — |