Ga4 Hg2 O8

semiconductor

· Ga4 Hg2 O8

Ga₄Hg₂O₈ is a mixed-metal oxide semiconductor compound containing gallium and mercury in a complex stoichiometric ratio. This material belongs to the family of quaternary or higher-order oxide semiconductors and is primarily of research interest rather than established commercial production. The compound's potential lies in optoelectronic and photonic applications where unconventional bandgap engineering or tunable electronic properties may offer advantages over conventional binary semiconductors, though its mercury content and synthesis complexity limit current industrial adoption.

experimental optoelectronicsphotonic device researchbandgap engineering studiessemiconductor physics researchadvanced materials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5792	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.501	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4 Hg2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control