Ga₄Fe₄S₁₀ is a mixed-metal sulfide semiconductor compound combining gallium and iron in a layered or framework structure, primarily of research interest rather than established commercial production. This material belongs to the family of multinary chalcogenides and is investigated for potential applications in photovoltaics, photoelectrocatalysis, and other optoelectronic devices where tunable bandgaps and mixed-valence metal centers may offer advantages over single-metal analogs. Development of such compounds targets cost reduction and performance enhancement compared to conventional semiconductors, though maturation to practical engineering use remains in early stages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01930 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5070 | eV/atom | — |