Ga₄Cu₂O₈ is a ternary oxide semiconductor compound combining gallium, copper, and oxygen in a mixed-valence structure. This material belongs to the family of copper-gallium oxides, which are primarily investigated in research contexts for their potential in optoelectronic and photocatalytic applications. The mixed-metal oxide composition offers tunable electronic and optical properties, making it of interest for next-generation semiconductor devices, though industrial deployment remains limited compared to established compound semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.960 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.570 | eV/atom | — |