Ga4 Bi4 O12

semiconductor

· Ga4 Bi4 O12

Ga₄Bi₄O₁₂ is a mixed-metal oxide semiconductor compound combining gallium and bismuth in a layered perovskite-related structure. This material is primarily of research interest for photocatalytic and optoelectronic applications, where the combination of two metal cations creates tunable electronic properties distinct from single-metal oxides. Engineers and materials researchers evaluate this compound for emerging technologies where visible-light activity and band-gap engineering are critical, though it remains largely experimental with limited commercial adoption compared to more established binary oxide semiconductors.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic devicesenvironmental remediationexperimental semiconductor researchsolar energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.133	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.682	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga4 Bi4 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control