Ga3Te is a gallium telluride ceramic compound belonging to the III-VI semiconductor family, combining gallium (Group III) and tellurium (Group VI) elements. This material is primarily of research and developmental interest for optoelectronic and infrared applications, where its wide bandgap and thermal properties make it potentially valuable for detecting and emitting infrared radiation. Ga3Te represents an exploratory composition within gallium telluride systems, with potential advantages in high-temperature stability and radiation hardness compared to more common semiconductors, though it remains less commercially established than binary GaTe or other gallium chalcogenides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32.97 | GPa | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 12.46 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.768 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -16.23 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1822 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.00704 | eV/atom | — |