Ga3Sb

ceramic

· JVASP-99373· Ga3Sb

Ga₃Sb is a III-V compound semiconductor ceramic composed of gallium and antimony. This material belongs to the gallium antimonide family, which is primarily investigated for optoelectronic and high-frequency electronic applications rather than structural ceramics. Ga₃Sb is largely a research-phase compound; the more common binary GaSb is the industrially established form, used in infrared detectors, thermophotovoltaic devices, and high-speed transistors where its narrow bandgap and high carrier mobility provide advantages over silicon and GaAs alternatives.

infrared detectors and sensorsthermophotovoltaic cellshigh-frequency transistorsoptoelectronic researchsemiconductor device developmentspace/cryogenic applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	34.17	GPa	—
Poisson's Ratio(ν)	0.4400	-	—
Shear Modulus(G)	5.180	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.087	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1600	eV/atom	—
Formation Energy(ΔHf)	0.08565	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3Sb

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental