Ga₃S is a gallium sulfide ceramic compound belonging to the III-V semiconductor material family, combining gallium with sulfur to form a wide-bandgap ceramic structure. This material is primarily explored in research contexts for optoelectronic and photonic applications, particularly in infrared sensing, nonlinear optical devices, and wide-bandgap semiconductor research where its thermal stability and optical transparency in specific wavelength regions offer advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1807 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1416 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2119 | eV/atom | — |