Ga₃NO₃ is a gallium nitride-based ceramic compound that belongs to the family of wide-bandgap semiconductors and advanced ceramics. This material is primarily of research and development interest rather than established production use, being investigated for its potential in high-temperature electronic devices, optoelectronic applications, and specialized ceramic matrices where gallium nitride's superior thermal stability and electrical properties offer advantages over conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2192 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.907 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -69.36 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03830 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.555 | eV/atom | — |