Ga₃Ge is an intermetallic ceramic compound combining gallium and germanium, belonging to the class of III–IV semiconductor ceramics. This material is primarily of research interest rather than established industrial production, with potential applications in optoelectronics and high-temperature semiconducting devices where its compound structure may offer tunable band gaps or thermal stability advantages over elemental or binary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2169 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -0.8900 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1262 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1252 | eV/atom | — |