Ga3Ge3N5

ceramic

· JVASP-141784· Ga3Ge3N5

Ga₃Ge₃N₅ is a ternary nitride ceramic compound combining gallium, germanium, and nitrogen—a research-phase material that belongs to the family of wide-bandgap semiconductors and advanced ceramics. While not yet established in mainstream industrial production, this material is of interest in semiconductor and photonic research communities for its potential in high-temperature electronics, optoelectronic devices, and next-generation power semiconductor applications where the combination of wide bandgap characteristics and multi-element composition may offer improved thermal stability or electrical performance compared to binary nitrides like GaN or GeN.

wide-bandgap semiconductorshigh-temperature electronicsoptoelectronic researchpower semiconductor developmentadvanced ceramic coatingsexperimental materials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.271	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.134	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2094	eV/atom	—
Formation Energy(ΔHf)	-0.1308	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3Ge3N5

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental