Ga₃BN₄ is an experimental ceramic compound combining gallium, boron, and nitrogen—a material system exploring the intersection of III-nitride and boron-nitride chemistries. This research-phase material is being investigated primarily in materials science and condensed-matter physics for its potential as a wide-bandgap semiconductor or structural ceramic, though commercial applications remain limited. Engineers would consider this compound only in advanced research contexts where novel electronic, thermal, or mechanical properties of gallium-boron-nitrogen systems are being explored, or as part of composite ceramic development rather than as a ready-for-production engineering material.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30,975.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 20,743.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2066 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.624 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.07 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 1.071 | C/m² | — | ||
Seebeck Coefficient(S) | -73.05 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2151 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5604 | eV/atom | — |