Ga3BN4 — Properties & Data | MatWorld

Ga3BN4

ceramic

· JVASP-35152· Ga3BN4

Ga₃BN₄ is an experimental ceramic compound combining gallium, boron, and nitrogen—a material system exploring the intersection of III-nitride and boron-nitride chemistries. This research-phase material is being investigated primarily in materials science and condensed-matter physics for its potential as a wide-bandgap semiconductor or structural ceramic, though commercial applications remain limited. Engineers would consider this compound only in advanced research contexts where novel electronic, thermal, or mechanical properties of gallium-boron-nitrogen systems are being explored, or as part of composite ceramic development rather than as a ready-for-production engineering material.

wide-bandgap semiconductor researchadvanced ceramics developmenthigh-temperature structural compositesthermal management materials (research phase)compound semiconductor exploration

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	213.6	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	143.0	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.720	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	2.624	eV	DFT · OptB88vdW
↳	3.523	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	11.07	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	5.847	-	DFT · OptB88vdW
↳	4.695	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.2600	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.250	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	1.071	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000447	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00377	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-73.05	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	427.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	1.180	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2151	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5604	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3BN4

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental