Ga3As

ceramic

· JVASP-106521· Ga3As

Ga₃As is a III-V semiconductor compound ceramic combining gallium and arsenic, belonging to the family of gallium arsenide derivatives used in optoelectronic and high-frequency applications. This material is primarily research-focused and represents compositions within the GaAs material system that exhibit wide bandgap and high electron mobility characteristics, making it relevant for specialized semiconductor devices requiring enhanced thermal stability or specific band structure engineering compared to standard binary GaAs.

optoelectronic deviceshigh-frequency electronicssemiconductor substratesintegrated circuitsresearch materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	45.80	GPa	—
Shear Modulus(G)	-2.640	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.873	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2419	eV/atom	—
Formation Energy(ΔHf)	0.07464	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3As

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental