Ga3 Bi1

semiconductor

· Ga3 Bi1

Ga₃Bi₁ is a III-V semiconductor compound composed of gallium and bismuth, representing an emerging material in the narrow-bandgap semiconductor family. This compound is primarily of research and developmental interest for optoelectronic and thermoelectric applications, where bismuth incorporation offers potential for tuning bandgap energy and enhancing carrier transport compared to conventional gallium arsenide or gallium antimonide systems.

infrared photodetectorsnarrow-bandgap semiconductorsthermoelectric devicesresearch optoelectronicsmid-IR emittershigh-mobility device structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01410	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.08900	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3 Bi1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control