Ga3 As3 O12

semiconductor

· Ga3 As3 O12

Ga₃As₃O₁₂ is a mixed-valence gallium arsenate oxide compound belonging to the semiconductor and oxide materials family, likely investigated for optoelectronic and photonic applications. This material combines gallium and arsenic—both key elements in high-frequency and photonic devices—with oxygen incorporation, making it relevant to researchers exploring wide bandgap semiconductors, optical modulators, or specialized dielectric applications. While not widely commercialized as a bulk material, compounds in this gallium-arsenic-oxide family are studied for potential use in integrated photonics, radiation-hard electronics, and advanced sensing where conventional GaAs or GaN may have limitations.

Research semiconductorsOptoelectronic devicesPhotonic integrated circuitsRadiation-resistant electronicsOptical modulatorsExperimental wide-bandgap materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	5,725.8	ksi	—
Shear Modulus(G)	3,148.3	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.197	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.527	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga3 As3 O12

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control