Ga2TeSe2 — Properties & Data | MatWorld

Ga2TeSe2

ceramic

· Ga2TeSe2

Ga₂TeSe₂ is a quaternary semiconductor ceramic composed of gallium, tellurium, and selenium, belonging to the family of III-VI compound semiconductors. This material is primarily studied in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it a candidate for infrared detectors, solar cells, and light-emitting devices. While not yet widely commercialized, Ga₂TeSe₂ and related mixed chalcogenides are of interest as alternatives to more toxic or less efficient binary semiconductors, particularly in applications requiring mid-to-far infrared response or specialized photonic functions.

infrared detectorsphotovoltaic researchoptoelectronic devicessemiconductor thin filmsadvanced materials researchnon-linear optical applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	24.99	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2200	-	DFT · OptB88vdW
Shear Modulus(G)	17.27	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.839	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.633	eV	DFT · OptB88vdW
↳	2.592	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	11.01	-	DFT · OptB88vdW
↳	9.700	-	DFT · PBE
↳	8.851 range 7.476–10.23median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.325	-	DFT · OptB88vdW
↳	5.957	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.3800	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.557	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.5174	C/m²	DFT · OptB88vdW
↳	0.04575	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00279	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00127	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-219.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	318	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	10.89	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00710	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4900	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2TeSe2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental