Ga₂TeSe₂ is a quaternary semiconductor ceramic composed of gallium, tellurium, and selenium, belonging to the family of III-VI compound semiconductors. This material is primarily studied in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it a candidate for infrared detectors, solar cells, and light-emitting devices. While not yet widely commercialized, Ga₂TeSe₂ and related mixed chalcogenides are of interest as alternatives to more toxic or less efficient binary semiconductors, particularly in applications requiring mid-to-far infrared response or specialized photonic functions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24.99 | GPa | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 17.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.839 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.633 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 9.700 | - | — | ||
| ↳ | 11.01 | - | — | ||
| ↳ | 8.851 range 7.476–10.23median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04575 | C/m² | — | ||
| ↳ | 0.5174 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -219.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00710 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4900 | eV/atom | — |