Ga₂Te is an inorganic ceramic compound composed of gallium and tellurium, belonging to the wider family of III-VI semiconductors and chalcogenides. This material is primarily of research and developmental interest rather than a mainstream industrial ceramic, with potential applications in optoelectronic and photonic devices where its semiconducting properties can be leveraged. Engineers would consider Ga₂Te for niche applications requiring wide bandgap semiconductors or infrared-responsive materials, though material maturity and processing routes remain active areas of investigation compared to more established alternatives like GaAs or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,244.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | -46.41 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1835 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2927 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.05917 | eV/atom | — |