Ga₂Te₅ is a compound semiconductor ceramic belonging to the III–V family, combining gallium and tellurium. This material is primarily investigated in research settings for optoelectronic and photonic device applications, where its direct bandgap and crystalline structure make it attractive for infrared detectors, solar cells, and light-emitting devices operating in specialized wavelength ranges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 2,093.6 | ksi | — | ||
| ↳ | 3,280.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.1800 | - | — | ||
Shear Modulus(G)2 entries | 2,008.6 | ksi | — | ||
| ↳ | 2,739.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2077 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9560 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 30.46 | - | — | ||
| ↳ | 21.11 range 17.19–25.02median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -151.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2249 | eV/atom | — |