Ga₂Te₃ is a III-VI compound semiconductor composed of gallium and tellurium, belonging to the family of wide-bandgap and narrow-bandgap semiconductors used in optoelectronic and thermal applications. This material is primarily investigated for infrared detection, thermal imaging, and photodetector applications where its tellurium content enables sensitivity in the infrared spectrum. Ga₂Te₃ remains largely a research-phase compound rather than a mature commercial material; it is notable within the gallium chalcogenide family for potential use in specialized sensing systems where alternatives like HgCdTe or InSb may be less suitable, though development and reliability data are limited compared to conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,905.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.4300 | - | — | ||
Shear Modulus(G) | -874.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2275 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.450 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 15.73 | - | — | ||
| ↳ | 21.06 | - | — | ||
| ↳ | 14.57 range 12.60–16.55median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.6288 | C/m² | — | ||
Seebeck Coefficient(S) | -208.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2973 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5698 | eV/atom | — | ||
| ↳ | -0.00934 | eV/atom | — |