Ga2Se3 — Properties & Data | MatWorld

Ga2Se3

Name: Ga2Se3
Brand: MatWorld

semiconductor

· Ga2Se3

Gallium selenide (Ga₂Se₃) is a III-VI semiconductor compound belonging to the gallium chalcogenide family, characterized by a layered crystal structure similar to other gallium selenides. While primarily a research material rather than a commodity semiconductor, Ga₂Se₃ is investigated for optoelectronic and photonic applications due to its direct bandgap and strong light-matter interaction, with potential advantages in mid-infrared detection, nonlinear optical devices, and thin-film photovoltaics where traditional semiconductors face limitations.

infrared photodetectorsnonlinear optical devicesthin-film photovoltaicsoptoelectronic researchlaser applicationsemerging semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	7.130	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	-12.44	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.905	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.300	eV	Measured
↳	0.4500	eV	DFT · OptB88vdW
↳	1.438	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	14.73	-	DFT · OptB88vdW
↳	12.03	-	DFT · PBE
↳	10.38 range 8.481–12.27median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.778	-	DFT · OptB88vdW
↳	6.754	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.7223	C/m²	DFT · OptB88vdW
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.19	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.5924	eV/atom	DFT · OptB88vdW
↳	-0.8474	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2Se3

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