Gallium selenide (Ga₂Se₃) is a III-VI semiconductor compound belonging to the gallium chalcogenide family, characterized by a layered crystal structure similar to other gallium selenides. While primarily a research material rather than a commodity semiconductor, Ga₂Se₃ is investigated for optoelectronic and photonic applications due to its direct bandgap and strong light-matter interaction, with potential advantages in mid-infrared detection, nonlinear optical devices, and thin-film photovoltaics where traditional semiconductors face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7.130 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | -12.44 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.905 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.300 | eV | — | ||
| ↳ | 0.4500 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 12.03 | - | — | ||
| ↳ | 14.73 | - | — | ||
| ↳ | 10.38 range 8.481–12.27median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7223 | C/m² | — | ||
Seebeck Coefficient(S) | -90.04 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.8474 | eV/atom | — | ||
| ↳ | -0.5924 | eV/atom | — |