Gallium phosphide (Ga₂P) is a III-V compound semiconductor ceramic with a direct bandgap, belonging to the family of gallium-based semiconductors. While less common than GaAs or GaN, Ga₂P is investigated primarily for optoelectronic and photonic applications where its bandgap properties offer potential advantages in light emission and detection across the visible and near-infrared spectrum. The material serves niche roles in research-driven photonic devices and specialized semiconductor applications, competing with more mature III-V compounds in cost-sensitive markets but offering distinct optical characteristics for tailored device designs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,678.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 1,646.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1803 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3059 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.01851 | eV/atom | — |