Ga₂O is a gallium oxide ceramic compound that represents an emerging material in the wide-bandgap semiconductor family, distinct from the more established gallium oxide polymorphs (β-Ga₂O₃). This material is primarily of research and developmental interest rather than established commercial production, with potential applications in next-generation power electronics and optoelectronics where high-temperature stability and wide bandgap properties are advantageous. Engineers considering Ga₂O should recognize it as an experimental material under investigation for high-voltage switching devices, UV detectors, and extreme-environment sensors where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,615.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.4200 | - | — | ||
Shear Modulus(G) | 2,165.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1741 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3095 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8025 | eV/atom | — |