Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor ceramic that has emerged as a promising material for next-generation power electronics and RF applications. Unlike silicon or traditional gallium arsenide, Ga₂O₃ offers superior breakdown field strength and thermal stability, making it attractive for high-voltage switching devices, power converters, and high-frequency transistors operating in extreme thermal environments. While still primarily in advanced research and early commercialization stages, Ga₂O₃-based devices are being developed by major semiconductor manufacturers and defense contractors as a critical enabler for more efficient, compact power systems in electric vehicles, renewable energy conversion, and aerospace applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 22,533.1 | ksi | DFT | ||
| ↳ | 30,778.5 | ksi | DFT · OptB88vdW | ||
| ↳ | 22,602.2 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 1.014 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.3100 | - | DFT · OptB88vdW | ||
| ↳ | 0.3060 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 10,058.8 | ksi | DFT | ||
| ↳ | 13,901.9 | ksi | DFT · OptB88vdW | ||
| ↳ | 10,078.7 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2357 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 4.400 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · PBE | ||
| ↳ | 2.267 | eV | DFT · OptB88vdW | ||
| ↳ | 4.048 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 25.23 | - | DFT · OptB88vdW | ||
| ↳ | 9.851 range 4.474–15.23median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 4.137 | - | DFT · OptB88vdW | ||
| ↳ | 2.809 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000475 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00111 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -73.46 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 439.9 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2632 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)3 entries | -1.034 | eV/atom | DFT | ||
| ↳ | -1.738 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -2.261 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data